MBR12060 Series
Manufacturer: GeneSiC Semiconductor
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DIODE MOD SCHOTT 60V 120A 2TOWER
| Part | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Current - Average Rectified (Io) (per Diode) | Diode Pair Count | Diode Configuration | Current - Reverse Leakage | Voltage - DC Reverse (Vr) (Max) | Technology | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Voltage - Forward (Vf) (Max) | Package Name | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | 150 °C | -55 °C | 120 A | 1 pair | Common Cathode | 3 mA | 60 V | Schottky | 500 ns | 200 mA | 750 mV | Twin Tower | Chassis Mount | Twin Tower |
GeneSiC Semiconductor | 150 °C | -55 °C | 120 A | 1 pair | Common Anode | 3 mA | 60 V | Schottky | 500 ns | 200 mA | 750 mV | Twin Tower | Chassis Mount | Twin Tower |
GeneSiC Semiconductor | 150 °C | -55 °C | 120 A | 1 pair | Common Anode | 3 mA | 60 V | Schottky | 500 ns | 200 mA | 750 mV | Twin Tower | Chassis Mount | Twin Tower |
GeneSiC Semiconductor | 150 °C | -55 °C | 120 A | 1 pair | Common Cathode | 3 mA | 60 V | Schottky | 500 ns | 200 mA | 750 mV | Twin Tower | Chassis Mount | Twin Tower |