Beta
⌘K
IR MOSFET™ N-CHANNEL POWER MOSFET ; PQFN 2 X 2 PACKAGE; 11.7 MOHM;
| Part | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Technology | FET Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 6-PowerVDFN | -55 °C | 150 °C | 1110 pF | 1.1 V | 14 nC | Surface Mount | MOSFET (Metal Oxide) | N-Channel | 10 A 12 A | 1.98 W 9.6 W | 2.5 V 4.5 V | 12 V | 20 V | 11.7 mOhm |