IXKN75N60C Series

DiscMSFT NChSuprJuncC3-Clas SOT227B/mini

Catalog

DiscMSFT NChSuprJuncC3-Clas SOT227B/mini

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Technology	Gate Charge (Max)	Rds On (Max)	Package Name	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) (Tc)
LITTELFUSE IXKN75N60C	10 V	560 W	3.9 V	Chassis Mount	-40 °C	150 °C	20 V	MOSFET (Metal Oxide)	500 nC	36 mOhm	SOT-227B	N-Channel	600 V	miniBLOC SOT-227-4	75 A

Catalog

DiscMSFT NChSuprJuncC3-Clas SOT227B/mini

Description

These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG.