1N8032 Series
Manufacturer: GeneSiC Semiconductor
Beta
⌘K
DIODE SIL CARB 650V 2.5A TO257
| Part | Package / Case | Capacitance | Reverse Recovery Time (trr) | Package Name | Mounting Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Current - Reverse Leakage | Technology | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | TO-257-3 | 274 pF | 0 ns | TO-257 | Through Hole | 650 V | 2.5 A | 1.3 V | 250 °C | -55 °C | 5 µA | SiC (Silicon Carbide) Schottky | |||
GeneSiC Semiconductor | TO-257-3 | 274 pF | 0 ns | TO-257 | Through Hole | 650 V | 2.5 A | 1.3 V | 250 °C | -55 °C | 5 µA | SiC (Silicon Carbide) Schottky | 500 mA | No Recovery Time | 500 mA 500 mA |