Beta
⌘K
MOSFET N-CH 560V 32A TO247-3
| Part | Vgs (Max) | Package / Case | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Mounting Type | FET Type | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | TO-247-3 | PG-TO247-3-1 | 32 A | -55 °C | 150 °C | 110 mOhm | Through Hole | N-Channel | 284 W | 10 V | 3.9 V | 560 V | MOSFET (Metal Oxide) | 4200 pF | 170 nC |