GT80 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
IGBT MOD 1200V 139A 658W SOT227
| Part | Operating Temperature (Min) | Operating Temperature (Max) | Input | Power - Max | Input Capacitance (Cies) @ Vce | Mounting Type | Configuration | Voltage - Collector Emitter Breakdown (Max) | Vce(on) (Max) | IGBT Type | Current - Collector (Ic) (Max) | Package / Case | Current - Collector Cutoff (Max) | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -40 °C | 150 °C | Standard | 658 W | 4.4 nF | Chassis Mount | Single | 1200 V | 2.55 V | Trench | 139 A | miniBLOC SOT-227-4 | 100 µA | SOT-227 |
Vishay General Semiconductor - Diodes Division | -40 °C | 175 °C | Standard | 454 VA | 10.8 nF | Chassis Mount | Single Switch | 600 V | 2.45 V | Trench Field Stop | 123 A | miniBLOC SOT-227-4 | 100 µA | SOT-227 |