1N5818 Series | Vishay General Semiconductor - Diodes Division | Zenode.ai

Catalog

1.0A Schottky Barrier Rectifier

Part	Current - Reverse Leakage	Capacitance	Voltage - DC Reverse (Vr) (Max)	Technology	Current - Average Rectified (Io)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Package / Case	Package Name	Voltage - Forward (Vf) (Max)	Mounting Type
Vishay General Semiconductor - Diodes Division 1N5818-E3/53	1 mA	110 pF	30 V	Schottky	1 A	125 °C	-65 °C	500 ns	200 mA	Axial DO-204AL DO-41	DO-204AL (DO-41)	875 mV 875 mV	Through Hole
Vishay General Semiconductor - Diodes Division 1N5818-E3/54	1 mA	110 pF	30 V	Schottky	1 A	125 °C	-65 °C	500 ns	200 mA	Axial DO-204AL DO-41	DO-204AL (DO-41)	550 mV	Through Hole
Vishay General Semiconductor - Diodes Division VS-1N5818	1 mA		30 V	Schottky	1 A	125 °C	-65 °C	500 ns	200 mA	Axial DO-204AL DO-41	DO-204AL (DO-41)	550 mV	Through Hole
Vishay General Semiconductor - Diodes Division 1N5818-E3/1	1 mA		30 V	Schottky	1 A	125 °C	-65 °C	500 ns	200 mA	Axial DO-204AL DO-41	DO-204AL (DO-41)	550 mV	Through Hole
Vishay General Semiconductor - Diodes Division 1N5818-E3/73	1 mA		30 V	Schottky	1 A	125 °C	-65 °C	500 ns	200 mA	Axial DO-204AL DO-41	DO-204AL (DO-41)	550 mV	Through Hole