AO42 Series

Manufacturer: Alpha & Omega Semiconductor Inc.

Catalog

MOSFET N-CH 100V 13.5A 8SOIC

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
Alpha & Omega Semiconductor Inc. AO4296	4.5 V, 10 V	N-Channel	60 nC	Surface Mount	100 V	MOSFET (Metal Oxide)	8.3 mOhm	20 V	3.1 W	8-SOIC	3.9 mm	0.154 in	13.5 A	-55 °C	150 °C	8-SOIC	2.3 V
Alpha & Omega Semiconductor Inc. AO4266E	4.5 V, 10 V	N-Channel	10 nC	Surface Mount	60 V	MOSFET (Metal Oxide)	13.5 mOhm	20 V	3.1 W	8-SOIC	3.9 mm	0.154 in	11 A	-55 °C	150 °C	8-SO		755 pF	2.2 V
Alpha & Omega Semiconductor Inc. AO4290A	4.5 V, 10 V	N-Channel		Surface Mount	100 V	MOSFET (Metal Oxide)	6.4 mOhm	20 V	3.1 W	8-SOIC	3.9 mm	0.154 in	15.5 A	-55 °C	150 °C	8-SOIC	2.3 V	4525 pF		95 nC
Alpha & Omega Semiconductor Inc. AO4202	4.5 V, 10 V	N-Channel	35 nC	Surface Mount	30 V	MOSFET (Metal Oxide)	5.3 mOhm	20 V	3.1 W	8-SOIC	3.9 mm	0.154 in	19 A	-55 °C	150 °C	8-SOIC	2.3 V
Alpha & Omega Semiconductor Inc. AO4266	4.5 V, 10 V	N-Channel		Surface Mount	60 V	MOSFET (Metal Oxide)		20 V	3.1 W	8-SOIC	3.9 mm	0.154 in	10 A	-55 °C	150 °C	8-SOIC	2.5 V	1340 pF		30 nC	15 mOhm
Alpha & Omega Semiconductor Inc. AO4268	4.5 V, 10 V	N-Channel	65 nC	Surface Mount	60 V	MOSFET (Metal Oxide)	4.8 mOhm	20 V	3.1 W	8-SOIC	3.9 mm	0.154 in	19 A	-55 °C	150 °C	8-SOIC	2.3 V	2500 pF
Alpha & Omega Semiconductor Inc. AO4262E	4.5 V, 10 V	N-Channel		Surface Mount	60 V	MOSFET (Metal Oxide)	6.5 mOhm	20 V	3.1 W	8-SOIC	3.9 mm	0.154 in	16.5 A	-55 °C	150 °C	8-SO		1652 pF	2.2 V	25 nC
Alpha & Omega Semiconductor Inc. AO4260	4.5 V, 10 V	N-Channel	100 nC	Surface Mount	60 V	MOSFET (Metal Oxide)	5.2 mOhm	20 V	3.1 W	8-SOIC	3.9 mm	0.154 in	18 A	-55 °C	150 °C	8-SOIC	2.4 V	4940 pF