IXBT16 Series

Disc IGBT BiMosfet-High Volt TO-268AA

Catalog

Disc IGBT BiMosfet-High Volt TO-268AA

Part	Package Name	Gate Charge	Current - Collector (Ic) (Max)	Power - Max	Input Type	Vce(on) (Max)	Test Condition Current	Test Condition Voltage	Test Condition Resistance	Test Condition Voltage (Secondary)	Switching Energy	Switching Energy (Off)	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Td (off) @ 25°C	Td (on) @ 25°C	Mounting Type	Reverse Recovery Time (trr)	Operating Temperature (Min)	Operating Temperature (Max)
LITTELFUSE IXBT16N170AHV	TO-268HV (IXBT)	65 nC	16 A	150 W	Standard	6 V	10 A	1360 V	10 Ohm	15 V	2.5 mJ	2.5 mJ	40 A	1700 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	250 ns	15 ns	Surface Mount	25 ns	-55 °C	150 °C
LITTELFUSE IXBT16N170A	TO-268AA	65 nC	16 A	150 W	Standard	6 V	10 A	1360 V	10 Ohm	15 V	1.2 mJ	1.2 mJ	40 A	1700 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	160 ns	15 ns	Surface Mount	360 ns	-55 °C	150 °C

Catalog

Disc IGBT BiMosfet-High Volt TO-268AA

Description

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.