Catalog
PNP power Darlington transistor
Description
AI
The devices are manufactured in planar base island technology with monolithic Darlington configuration.
PNP power Darlington transistor
PNP power Darlington transistor
| Part | Package / Case | Current - Collector (Ic) (Max) [Max] | Transistor Type | Power - Max [Max] | Mounting Type | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | Operating Temperature | Voltage - Collector Emitter Breakdown (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics BD680 | TO-126-3, TO-225AA | 4 A | PNP - Darlington | 40 W | Through Hole | 500 çA | SOT-32-3 | 2.5 V | 150 °C | 80 V | 750 |
STMicroelectronics BD680 | |||||||||||
STMicroelectronics BD680 |