IPA90R Series

Catalog

MOSFET N-CH 900V 5.7A TO220-FP

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPA90R1K0C3XKSA1	20 V	900 V	PG-TO220-FP	850 pF	34 nC	MOSFET (Metal Oxide)	TO-220-3 Full Pack	N-Channel	5.7 A	3.5 V	1 Ohm	10 V	32 W	-55 °C	150 °C	Through Hole
Infineon Technologies IPA90R800C3XKSA1	20 V	900 V	PG-TO220-FP		42 nC	MOSFET (Metal Oxide)	TO-220-3 Full Pack	N-Channel	6.9 A	3.5 V		10 V		-55 °C	150 °C	Through Hole	800 mOhm	33 W
Infineon Technologies IPA90R500C3XKSA1	20 V	900 V	PG-TO220-FP			MOSFET (Metal Oxide)	TO-220-3 Full Pack	N-Channel	11 A	3.5 V	500 mOhm	10 V	34 W	-55 °C	150 °C	Through Hole			68 nC	1700 pF
Infineon Technologies IPA90R1K2C3XKSA1	20 V	900 V	PG-TO220-FP			MOSFET (Metal Oxide)	TO-220-3 Full Pack	N-Channel	5.1 A	3.5 V	1.2 Ohm	10 V	31 W	-55 °C	150 °C	Through Hole			28 nC	710 pF