IQE008N Series
Manufacturer: INFINEON
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IQE008N03LM5CG OPTIMOS™ LOW-VOLTAGE POWER MOSFET 30 V IN PQFN 3.3X3.3 SOURCE-DOWN PACKAGE
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Technology | Package Name | Power Dissipation (Max) | Vgs(th) (Max) | FET Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Input Capacitance (Ciss) (Max) | Package / Case | Vgs (Max) | Rds On (Max) | Gate Charge (Max) | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 30 V | 253 A | 27 A | MOSFET (Metal Oxide) | PG-TTFN-9-1 | 2.1 W 89 W | 2 V | N-Channel | 10 V | 4.5 V | 5700 pF | 8-PowerTDFN | 16 V | 0.85 mOhm | 64 nC | Surface Mount | -55 °C | 150 °C |