Catalog
5 A, 1200 V low drop internally clamped IGBT
Description
AI
This IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
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5 A, 1200 V low drop internally clamped IGBT
5 A, 1200 V low drop internally clamped IGBT
| Part | Power - Max | Package Name | Mounting Type | Td (off) @ 25°C | Td (on) @ 25°C | Package / Case | Current - Collector Pulsed (Icm) | Switching Energy (Off) | Switching Energy (On) | Operating Temperature (Min) | Operating Temperature (Max) | Vce(on) (Max) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Input Type | Test Condition Resistance | Test Condition Voltage (Secondary) | Test Condition Voltage | Test Condition Current |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 75 W | DPak | Surface Mount | 12.1 µs | 690 ns | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 10 A | 9 mJ | 2.59 mJ | -55 °C | 150 °C | 2 V | 10 A | 1200 V | Standard | 1 kOhm | 15 V | 960 V | 5 A |