DMN1004UFDF Series

12V N-Channel Enhancement Mode MOSFET

Catalog

12V N-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Diodes Inc DMN1004UFDF-13	2.1 W	2.5 V 4.5 V	-55 °C	150 °C	U-DFN2020-6	12 V	6-UDFN Exposed Pad	8 V	N-Channel	MOSFET (Metal Oxide)	15 A	1 V	4.8 mOhm	2385 pF	Surface Mount
Diodes Inc DMN1004UFDF-7	2.1 W	2.5 V 4.5 V	-55 °C	150 °C	U-DFN2020-6	12 V	6-UDFN Exposed Pad	8 V	N-Channel	MOSFET (Metal Oxide)	15 A	1 V	4.8 mOhm	2385 pF	Surface Mount

Catalog

12V N-Channel Enhancement Mode MOSFET

Key Features

• 0.6mm Profile – Ideal for Low Profile Applications

• PCB Footprint of 4mm2

• Low Gate Threshold Voltage

• Low On-Resistance

• ESD Protected up to 8kV

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.