IMW65R020 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 83 A, 650 V, 0.018 OHM, TO-247
| Part | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | FET Type | Technology | Package / Case | Vgs(th) (Max) | Mounting Type | Current - Continuous Drain (Id) (Tc) | Vgs (Max) Positive | Vgs (Max) Negative | Rds On (Max) | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 273 W | 20 V | 15 V | -55 °C | 175 °C | 57 nC | 650 V | 2038 pF 2038 pF | N-Channel | SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide) | TO-247-3 | 5.6 V | Through Hole | 83 A | 23 V | -7 V | 18 mOhm | PG-TO247-3-40 |