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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Mounting Type | Package Name | FET Type | Qualification | Package / Case | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Rds On (Max) | Grade | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs (Max) | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Technology | Power Dissipation (Max) | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Surface Mount | DFN2020MD-6 | N-Channel | AEC-Q101 | 6-UDFN Exposed Pad | 30 V | 2.5 V | 16.8 mOhm | Automotive | 10 V | 4.5 V | 20 V | 553 pF | -55 °C | 175 °C | 8.4 A | 23 A | MOSFET (Metal Oxide) | 2.3 W 15 W | 16 nC |