PCFFS5065AF Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 650 V, D1, Die

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 650 V, D1, Die

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max)	Reverse Recovery Time (trr)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Voltage - Forward (Vf) (Max)	Package / Case	Current - Reverse Leakage	Technology	Capacitance	Package Name	Current - Average Rectified (Io)
ON Semiconductor PCFFS5065AF	Surface Mount	650 V	0 ns	175 °C	-55 °C	500 mA	No Recovery Time	500 mA 500 mA	1.75 V	Die	200 µA	SiC (Silicon Carbide) Schottky	2530 pF	Die	60 A

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 650 V, D1, Die

Key Features

• Max Junction Temperature

• High Surge Current Capacity

• Positive Temperature Coefficient

• No Reverse Recovery / No Forward Recovery

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.