Catalog
20 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Beta
⌘K
20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Power Dissipation (Max) | FET Type | Mounting Type | Vgs(th) (Max) | Vgs (Max) | Current - Continuous Drain (Id) (Ta) | Technology | Drain to Source Voltage (Vdss) | Package Name | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Package / Case | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 360 mW | N-Channel | Surface Mount | 950 mV | 8 V | 600 mA | MOSFET (Metal Oxide) | 20 V | DFN1006B-3 | 21.3 pF | -55 °C | 150 °C | 3-XFDFN | 0.7 nC 0.7 nC |
Nexperia USA Inc. | 2.7 W 360 mW | N-Channel | Surface Mount | 950 mV | 8 V | 600 mA | MOSFET (Metal Oxide) | 20 V | DFN1006B-3 | 21.3 pF | -55 °C | 150 °C | 3-XFDFN | 0.7 nC 0.7 nC |