PSMN8 Series
Manufacturer: NXP USA Inc.
MOSFET N-CH 30V 62A LFPAK56
| Part | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Mounting Type | Package / Case | Technology | Current - Continuous Drain (Id) (Tc) | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs (Max) | Rds On (Max) | Package Name | FET Type | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Tj) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP USA Inc. | 10 V | 4.5 V | 18.3 nC | 1005 pF 1005 pF | Surface Mount | SC-100 SOT-669 | MOSFET (Metal Oxide) | 62 A | 2.15 V | 30 V | 56 W | 20 V | 8.3 mOhm | LFPAK56 Power-SO8 | N-Channel | -55 °C | 175 °C | ||
NXP USA Inc. | 100 nC | 5512 pF | Through Hole | Isolated Tab TO-220-3 Full Pack | MOSFET (Metal Oxide) | 4 V | 100 V | 55 W | 20 V | 8.5 mOhm | TO-220F | N-Channel | -55 °C | 175 °C | 49 A | 10 V | |||
NXP USA Inc. | 10 V | 4.5 V | 15 nC | 848 pF | Surface Mount | SC-100 SOT-669 | MOSFET (Metal Oxide) | 54 A 54 A | 1.95 V | 30 V | 42 W | 20 V | 7.9 mOhm | LFPAK56 Power-SO8 | N-Channel | -55 °C | 175 °C |