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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Qualification | Input Capacitance (Ciss) (Max) | FET Type | Mounting Type | Grade | Power Dissipation (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Vgs (Max) | Rds On (Max) | Current - Continuous Drain (Id) (Ta) | Package / Case | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Max) | Package Name | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | AEC-Q101 | 296 pF | N-Channel | Surface Mount | Automotive | 5.6 W 590 mW | 2.5 V | 8 V | 12 V | 57 mOhm | 3.4 A | SC-59 SOT-23-3 TO-236-3 | 30 V | MOSFET (Metal Oxide) | 5 nC | TO-236AB | 1.25 V | -55 °C | 175 °C |