APTM100H45STG-Module Series

1000V/Full bridge + series and parallel diode/Si MOSFET

Catalog

1000V/Full bridge + series and parallel diode/Si MOSFET

Part	Current - Continuous Drain (Id)	Power - Max	Drain to Source Voltage (Vdss)	Channel Count	Configuration - Features	Configuration	Technology	Package Name	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Mounting Type	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)
Microchip Technology APTM100H45STG	18 A	357 W	1000 V	4	Full Bridge	N-Channel	MOSFET (Metal Oxide)	SP4	154 nC	4350 pF	540 mOhm	Chassis Mount	SP4	-40 °C	150 °C	5 V

Catalog

1000V/Full bridge + series and parallel diode/Si MOSFET

Description

* MOSFETs * Low RDSon * Low input and Miller capacitance * Low gate charge * Avalanche energy rated * Very rugged * Kelvin source for easy drive * Low stray inductance * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Internal thermistor for temperature monitoring (optional) * Low junction to case thermal resistance * RoHS Compliant