GB2X100 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SIC 1200V 185A SOT227
| Part | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) | Package / Case | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Mounting Type | Current - Reverse Leakage | Technology | Current - Average Rectified (Io) (per Diode) | Diode Count | Diode Configuration | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 0 ns | 1200 V | 1.8 V | miniBLOC SOT-227-4 | 500 mA | No Recovery Time | 500 mA 500 mA | 175 °C | -55 °C | Chassis Mount | 80 µA | SiC (Silicon Carbide) Schottky | 185 A | 2 | Independent | SOT-227 |
GeneSiC Semiconductor | 0 ns | 1200 V | 1.8 V | miniBLOC SOT-227-4 | 500 mA | No Recovery Time | 500 mA 500 mA | 175 °C | -55 °C | Chassis Mount | 80 µA | SiC (Silicon Carbide) Schottky | 185 A | 2 | Independent | SOT-227 |