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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Package Name | FET Type | Package / Case | Current - Continuous Drain (Id) (Ta) | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Input Capacitance (Ciss) (Max) | Rds On (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Technology | Power Dissipation (Max) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | SOT-323 | N-Channel | SC-70 SOT-323 | 250 mA | 0.7 nC 0.7 nC | -55 °C | 150 °C | 4.5 V | 1.5 V | 27 pF | 2.8 Ohm | Surface Mount | 60 V | 900 mV | MOSFET (Metal Oxide) | 1.5 W 270 mW | 8 V |