IR2104 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 8SOIC

Part	Gate Type	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Channel Type	Rise Time (Typ)	Fall Time (Typ)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Package Length	Package Name	Package Width	Gate Channel	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Number of Drivers	Logic Voltage - VIL	Logic Voltage - VIH	Input Type	High Side Voltage - Max (Bootstrap)	Driven Configuration
INFINEON IR2104S	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	Surface Mount	Synchronous	100 ns	50 ns	360 mA	210 mA	0.154 in	8-SOIC	3.9 mm	N-Channel	10 VDC	20 V	2	0.8 V	3 V	Non-Inverting	600 V	Half-Bridge
INFINEON IR2104STRPBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	Surface Mount	Synchronous	100 ns	50 ns	360 mA	210 mA	0.154 in	8-SOIC	3.9 mm	N-Channel	10 VDC	20 V	2	0.8 V	3 V	Non-Inverting	600 V	Half-Bridge
INFINEON IR2104STR	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	Surface Mount	Synchronous	100 ns	50 ns	360 mA	210 mA	0.154 in	8-SOIC	3.9 mm	N-Channel	10 VDC	20 V	2	0.8 V	3 V	Non-Inverting	600 V	Half-Bridge
INFINEON IR2104PBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	Through Hole	Synchronous	100 ns	50 ns	360 mA	210 mA	0.3 in	8-DIP 8-PDIP	7.62 mm	N-Channel	10 VDC	20 V	2	0.8 V	3 V	Non-Inverting	600 V	Half-Bridge
INFINEON IR2104SPBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	Surface Mount	Synchronous	100 ns	50 ns	360 mA	210 mA	0.154 in	8-SOIC	3.9 mm	N-Channel	10 VDC	20 V	2	0.8 V	3 V	Non-Inverting	600 V	Half-Bridge