650 V, 20 A RAPID 2 EMITTER CONTROLLED POWER SILICON DIODE IN COMMON CATHODE CONFIGURATION IN A TO-247 PACKAGE
| Part | Diode Configuration | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Supplier Device Package | Mounting Type | Current - Reverse Leakage @ Vr | Package / Case | Current - Average Rectified (Io) (per Diode) | Reverse Recovery Time (trr) | Speed | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 1 Pair Common Cathode | -40 °C | 175 ░C | 650 V | Standard | PG-TO247-3 | Through Hole | 40 µA | TO-247-3 | 10 A | 30 ns | 200 mA 500 ns | 2.2 V |