Beta
⌘K
DIODE GEN PURP 1KV 6A R-6
| Part | Voltage - Forward (Vf) (Max) @ If | Speed | Speed | Current - Reverse Leakage @ Vr | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Capacitance @ Vr, F | Supplier Device Package | Mounting Type | Qualification | Grade | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 1 V | Standard Recovery >500ns | 200 mA | 10 çA | R-6 Axial | 1000 V | 6 A | 60 pF | R-6 | Through Hole | AEC-Q101 | Automotive | 150 °C | -55 °C | Standard |
Taiwan Semiconductor Corporation | 1 V | Standard Recovery >500ns | 200 mA | 10 çA | R-6 Axial | 1000 V | 6 A | 60 pF | R-6 | Through Hole | 150 °C | -55 °C | Standard |