STGB50H65FB2 Series

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package

Catalog

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package

Part	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Test Condition	Current - Collector (Ic) (Max) [Max]	Mounting Type	IGBT Type	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Package / Case	Td (on/off) @ 25°C	Power - Max [Max]	Current - Collector Pulsed (Icm)
STMicroelectronics STGB50H65FB2	580 µJ 910 µJ	-55 °C	175 ░C	151 nC	4.7 Ohm 15 V 50 A 400 V	86 A	Surface Mount	Trench Field Stop	2 V	650 V	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	28 ns 115 ns	272 W	150 A

Catalog

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.