Beta
⌘K
POWER MOSFET, P CHANNEL, 30 V, 10 A, 0.02 OHM, SOIC, SURFACE MOUNT
| Part | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Vgs (Max) | Technology | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | FET Type | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4.5 V 10 V | -55 °C | 150 °C | 2.5 W | 20 V | MOSFET (Metal Oxide) | Surface Mount | 1700 pF | 10 A | 8-SO | 1 V | 8-SOIC | 3.9 mm | 0.154 in | 20 mOhm | P-Channel | 92 nC | 30 V |