Catalog
200V 10A, TO-252, Ultra low IRSBD
Description
AI
RB088BM200FNS is a ultra low IRschottky barrier diode, suitable for Switching power supply.
Beta
⌘K
200V 10A, TO-252, Ultra low IRSBD
200V 10A, TO-252, Ultra low IRSBD
| Part | Current - Reverse Leakage | Diode Pair Count | Diode Configuration | Package Name | Voltage - DC Reverse (Vr) (Max) | Mounting Type | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Package / Case | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) | Technology | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 7 µA | 1 pair | Common Cathode | TO-252 | 200 V | Surface Mount | 500 ns | 200 mA | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 175 °C | 880 mV | Schottky | 5 A |