Catalog
60 V, 2 A PNP/PNP low VCEsat double transistor
Description
AI
PNP/PNP low VCEsatdouble transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Beta
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60 V, 2 A PNP/PNP low VCEsat double transistor
60 V, 2 A PNP/PNP low VCEsat double transistor
| Part | Frequency - Transition | Qualification | Grade | Current - Collector (Ic) (Max) | Power - Max | Operating Temperature | Mounting Type | Vce Saturation (Max) | Package / Case | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) | Package Length | Package Name | Package Width | PNP Count | Transistor Configuration | Transistor Type | Voltage - Collector Emitter Breakdown (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 100 MHz | AEC-Q100 | Automotive | 2 A | 510 mW | 150 °C | Surface Mount | 500 mV | 6-UFDFN Exposed Pad | 100 nA | 110 | 2 mm | 6-HUSON | 2 mm | 2 | Dual | PNP | 60 V |
Nexperia USA Inc. | 100 MHz | AEC-Q101 | Automotive | 2 A | 370 mW | 150 °C | Surface Mount | 500 mV | 6-UDFN Exposed Pad | 100 nA | 110 | DFN2020D-6 | 2 | Dual | PNP | 60 V |