PHD22 Series
Manufacturer: NXP USA Inc.
Beta
⌘K
MOSFET N-CH 200V 21.1A DPAK
| Part | Current - Continuous Drain (Id) (Tc) | Power Dissipation (Max) | Vgs(th) (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) | Input Capacitance (Ciss) (Max) | Package / Case | Vgs (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Technology | Package Name | Gate Charge (Max) | Drain to Source Voltage (Vdss) | FET Type | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NXP USA Inc. | 21.1 A | 150 W | 4 V | 10 V | 120 mOhm | 1380 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 20 V | -55 °C | 175 °C | MOSFET (Metal Oxide) | DPak | 30.8 nC 30.8 nC | 200 V | N-Channel | Surface Mount |