DGTD65T15H2TF Series

650V FIELD STOP IGBT IN TO247

Catalog

650V FIELD STOP IGBT IN TO247

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Test Condition	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Switching Energy	Power - Max [Max]	Reverse Recovery Time (trr)	Gate Charge	Mounting Type	IGBT Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)
Diodes Inc DGTD65T40S1PT	-40 C	175 °C	TO-247-3	80 A	7.9 Ohm 15 V 40 A 400 V	2.4 V	650 V	TO-247	1.15 mJ 350 µJ	341 W	145 ns	219 nC	Through Hole	Field Stop	58 ns	245 ns
Diodes Inc DGTD65T50S1PT	-40 C	175 °C	TO-247-3	100 A	7.9 Ohm 15 V 50 A 400 V	2.4 V	650 V	TO-247	550 µJ 770 µJ	375 W	80 ns	287 nC	Through Hole	Field Stop	58 ns 328 ns		200 A
Diodes Inc DGTD65T40S2PT	-40 C	175 °C	TO-247-3	80 A	10 Ohm 15 V 40 A 400 V	2.3 V	650 V	TO-247	400 µJ 500 µJ	230 W	60 ns	60 nC	Through Hole	Field Stop	6 ns 55 ns		120 A
Diodes Inc DGTD65T15H2TF	-40 C	175 °C	TO-220-3 Full Pack Isolated Tab	30 A	10 Ohm 15 A 15 V 400 V	2 V	650 V	ITO-220AB	86 µJ 270 µJ		150 ns	61 nC	Through Hole	Field Stop	19 ns 128 ns		60 A

Catalog

650V FIELD STOP IGBT IN TO247

Key Features

• High ruggedness for Motor Control

• VCE(sat) Positive Temperature Coefficient

• Very Soft, Fast Recovery Anti-Parallel Diode

• Low EMI

• Maximum Junction Temperature 175°C

Description

The DGTD65T15H2TF is produced using advanced Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.