IDH20G65 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, SINGLE, 650 V, 20 A, 29 NC, TO-220
| Part | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) | Voltage - DC Reverse (Vr) (Max) | Package Name | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Current - Average Rectified (Io) | Capacitance | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Mounting Type | Current - Reverse Leakage | Package / Case | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 0 ns | 1.7 V | 650 V | PG-TO220-2-1 | 175 °C | -55 °C | 20 A | 590 pF | 500 mA | No Recovery Time | 500 mA 500 mA | Through Hole | 210 µA | TO-220-2 | SiC (Silicon Carbide) Schottky |