MOSFET, P-CH, 40V, 6.2A, SOIC ROHS COMPLIANT: YES
| Part | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Drain to Source Voltage (Vdss) | FET Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4.5 V 10 V | 8-SOIC | 3.9 mm | 0.154 in | 3 V | 2.5 W | 20 V | 3220 pF | MOSFET (Metal Oxide) | 80 nC | Surface Mount | 40 V | P-Channel | 8-SO | 41 mOhm | -55 °C | 150 °C | 6.2 A |