DMN2008LFU Series

Dual N-Channel Enhancement Mode MOSFET

Catalog

Dual N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Diodes Inc DMN2008LFU-7	Surface Mount	U-DFN2030-6 (Type B)	42.3 nC	6-UFDFN Exposed Pad	MOSFET (Metal Oxide)	20 V	1.5 V	-55 °C	150 °C	1 W	2 N-Channel (Dual) Common Drain	14.5 A	5.4 mOhm	1418 pF
Diodes Inc DMN2008LFU-13	Surface Mount	U-DFN2030-6 (Type B)	42.3 nC	6-UFDFN Exposed Pad	MOSFET (Metal Oxide)	20 V	1.5 V	-55 °C	150 °C	1 W	2 N-Channel (Dual)	14.5 A	5.4 mOhm	1418 pF

Catalog

Dual N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.