SI4916 Series

Catalog

MOSFET 2N-CH 30V 10A/10.5A 8SOIC

Part	Rds On (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	Mounting Type	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	FET Feature	Channel Count	Configuration - Features	Configuration	Package Length	Package Width	Technology	Power - Max (Value 1)	Power - Max (Value 2)	Vgs(th) (Max)
Vishay Dale SI4916DY-T1-E3	18 mOhm	10 nC	30 V	10 A	10.5 A	Surface Mount	8-SOIC	-55 °C	150 °C	Logic Level Gate	2	Half Bridge	N-Channel	0.154 in	3.9 mm	MOSFET (Metal Oxide)	3.3 W	3.5 W	3 V
Vishay Dale SI4916DY-T1-GE3	18 mOhm	10 nC	30 V	10 A	10.5 A	Surface Mount	8-SOIC	-55 °C	150 °C	Logic Level Gate	2	Half Bridge	N-Channel	0.154 in	3.9 mm	MOSFET (Metal Oxide)	3.3 W	3.5 W	3 V