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20 V, P-channel Trench MOSFET
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Technology | Package Name | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | FET Type | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | Rds On (Max) | Vgs (Max) | Vgs(th) (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package / Case | Current - Continuous Drain (Id) (Ta) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 20 V | 4.15 W 490 mW | MOSFET (Metal Oxide) | TO-236AB | 1820 pF | 22.1 nC | P-Channel | -55 °C | 150 °C | Surface Mount | 32 mOhm | 8 V | 950 mV | 4.5 V | 1.8 V | SC-59 SOT-23-3 TO-236-3 | 4.5 A |