IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 65 MOHM;
| Part | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Vgs (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Mounting Type | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 17 A | 45 W | 16 V | 55 V | 65 mOhm | 15 nC | 480 pF | 2 V | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | -55 °C | 175 ░C | N-Channel | MOSFET (Metal Oxide) | 4 V | 10 V | TO-252AA (DPAK) |