BSZ100 Series

Catalog

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 10 MOHM;

Part	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies BSZ100N03LSGATMA1	PG-TSDSON-8	8-PowerTDFN	4.5 V 10 V	20 V	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	30 V	1500 pF	10 mOhm	2.2 V	2.1 W 30 W	Surface Mount	17 nC
Infineon Technologies BSZ100N06LS3GATMA1	PG-TSDSON-8	8-PowerVDFN	4.5 V 10 V	20 V	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	60 V		10 mOhm		2.1 W 50 W	Surface Mount		3500 pF	2.2 V	11 A 20 A	45 nC