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20 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Package / Case | Drain to Source Voltage (Vdss) | Rds On (Max) | Package Name | Current - Continuous Drain (Id) (Ta) | Operating Temperature (Min) | Operating Temperature (Max) | Technology | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Power Dissipation (Max) | FET Type | Vgs (Max) | Vgs(th) (Max) | Mounting Type | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 6-UDFN Exposed Pad | 20 V | 22 mOhm | DFN2020MD-6 | 7 A | -55 °C | 150 °C | MOSFET (Metal Oxide) | 17 nC | 1136 pF | 4.5 V | 1.8 V | 1.7 W | N-Channel | 12 V | 900 mV | Surface Mount | ||
 Nexperia USA Inc. | 6-UDFN Exposed Pad | 20 V | 22 mOhm | DFN2020MD-6 | 7 A | -55 °C | 150 °C | MOSFET (Metal Oxide) | 17 nC 17 nC | 1136 pF | 4.5 V | 1.8 V | 1.7 W 12.5 W | N-Channel | 12 V | 900 mV | Surface Mount | AEC-Q101 | Automotive |
Nexperia USA Inc. | 6-UDFN Exposed Pad | 20 V | 22 mOhm | DFN2020MD-6 | 7 A | -55 °C | 150 °C | MOSFET (Metal Oxide) | 17 nC 17 nC | 1136 pF | 4.5 V | 1.8 V | 1.7 W 12.5 W | N-Channel | 12 V | 900 mV | Surface Mount |