TRANS PNP 150V 0.05A TO92MOD
| Part | Vce Saturation (Max) @ Ib, Ic | Transistor Type | Operating Temperature | Supplier Device Package | Mounting Type | Package / Case | Current - Collector (Ic) (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) | Frequency - Transition | Power - Max [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage  | 800 mV  | PNP  | 150 °C  | TO-92MOD  | Through Hole  | TO-226-3  TO-92-3 Long Body  | 50 mA  | 100 nA  | 150 V  | 120 MHz  | 800 mW  | 70  | 
Toshiba Semiconductor and Storage  | 800 mV  | PNP  | 150 °C  | TO-92MOD  | Through Hole  | TO-226-3  TO-92-3 Long Body  | 50 mA  | 100 nA  | 150 V  | 120 MHz  | 800 mW  | 70  | 
Toshiba Semiconductor and Storage  | 800 mV  | PNP  | 150 °C  | TO-92MOD  | Through Hole  | TO-226-3  TO-92-3 Long Body  | 50 mA  | 100 nA  | 150 V  | 120 MHz  | 800 mW  | 70  | 
Toshiba Semiconductor and Storage  | 800 mV  | PNP  | 150 °C  | TO-92MOD  | Through Hole  | TO-226-3  TO-92-3 Long Body  | 50 mA  | 100 nA  | 150 V  | 120 MHz  | 800 mW  | 70  | 
Toshiba Semiconductor and Storage  | 800 mV  | PNP  | 150 °C  | TO-92MOD  | Through Hole  | TO-226-3  TO-92-3 Long Body  | 50 mA  | 100 nA  | 150 V  | 120 MHz  | 800 mW  | 70  | 
Toshiba Semiconductor and Storage  | 800 mV  | PNP  | 150 °C  | TO-92MOD  | Through Hole  | TO-226-3  TO-92-3 Long Body  | 50 mA  | 100 nA  | 150 V  | 120 MHz  | 800 mW  | 70  | 
Toshiba Semiconductor and Storage  | 800 mV  | PNP  | 150 °C  | TO-92MOD  | Through Hole  | TO-226-3  TO-92-3 Long Body  | 50 mA  | 100 nA  | 150 V  | 120 MHz  | 800 mW  | 70  |