DMN2022UFDF Series

Dual N-Channel Enhancement Mode MOSFET

Catalog

Dual N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	Configuration	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)
Diodes Inc DMN2022UNS-13	1 V	8-PowerVDFN	Surface Mount	20 V	-55 °C	150 °C	1.2 W	1870 pF	PowerDI3333-8 (Type UXB)	20.3 nC	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Drain	10.7 A	10.8 mOhm
Diodes Inc DMN2022UFDF-7	1 V	6-UDFN Exposed Pad	Surface Mount	20 V	-55 °C	150 °C		907 pF	U-DFN2020-6 (Type F)	18 nC	MOSFET (Metal Oxide)		7.9 A		660 mW	1.5 V 4.5 V	22 mOhm	N-Channel	8 V
Diodes Inc DMN2022UDH-7		8-VDFN	Surface Mount						V-DFN3030-8

Catalog

Dual N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• ESD Protected Up to 2kV

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.