L6491 Series

High voltage high and low-side 4 A gate driver

Catalog

High voltage high and low-side 4 A gate driver

Part	Driven Configuration	Mounting Type	Package / Case [x]	Package / Case [y]	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Channel Type	Supplier Device Package	Gate Type	Input Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Logic Voltage - VIL, VIH	Operating Temperature [Min]	Operating Temperature [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers
STMicroelectronics L6491DTR	Half-Bridge	Surface Mount	0.154 in	3.9 mm	14-SOIC	20 V	10 VDC	Independent	14-SO	IGBT N-Channel MOSFET	Non-Inverting	15 ns	15 ns	600 V	1.45 V 2 V	-40 °C	125 ¯C	4 A	4 A
STMicroelectronics L6491D	Half-Bridge	Surface Mount	0.154 in	3.9 mm	14-SOIC	20 V	10 VDC	Independent	14-SO	IGBT N-Channel MOSFET	Non-Inverting	15 ns	15 ns	600 V	1.45 V 2 V	-40 °C	125 ¯C	4 A	4 A	2

Catalog

High voltage high and low-side 4 A gate driver

Description

The L6491 is a high voltage device manufactured with the BCD6 "OFF-LINE" technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT. The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP. An integrated comparator is available for fast protection against over-current, over-temperature, etc.