IPI25N Series

Catalog

MOSFET N-CH 55V 25A TO262-3

Part	Package / Case	Vgs(th) (Max) @ Id	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPI25N06S3L-22	I2PAK TO-262-3 Long Leads TO-262AA	2.2 V	AEC-Q101	2260 pF	21.6 mOhm	Automotive	-55 °C	175 ░C	PG-TO262-3	16 V	50 W	55 V	25 A	N-Channel	10 V	5 V	MOSFET (Metal Oxide)	Through Hole
Infineon Technologies IPI25N06S3-25	I2PAK TO-262-3 Long Leads TO-262AA	4 V		1862 pF			-55 °C	175 ░C	PG-TO262-3	20 V		55 V	25 A	N-Channel			MOSFET (Metal Oxide)	Through Hole	10 V	25.1 mOhm	48 W	41 nC