IPP90R Series

Catalog

MOSFET N-CH 900V 11A TO220-3

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPP90R500C3XKSA1	10 V	900 V	11 A	20 V	1700 pF	156 W	N-Channel	500 mOhm	-55 °C	150 °C	TO-220-3	Through Hole	MOSFET (Metal Oxide)	68 nC	PG-TO220-3-1	3.5 V
Infineon Technologies IPP90R800C3XKSA1	10 V	900 V	6.9 A	20 V		104 W	N-Channel		-55 °C	150 °C	TO-220-3	Through Hole	MOSFET (Metal Oxide)		PG-TO220-3-1	3.5 V	800 mOhm	42 nC
Infineon Technologies IPP90R1K0C3XKSA1	10 V	900 V	5.7 A	20 V			N-Channel	1 Ohm	-55 °C	150 °C	TO-220-3	Through Hole	MOSFET (Metal Oxide)		PG-TO220-3-1	3.5 V		34 nC	850 pF
Infineon Technologies IPP90R1K2C3XKSA1	10 V	900 V	5.1 A	20 V	710 pF	83 W	N-Channel	1.2 Ohm	-55 °C	150 °C	TO-220-3	Through Hole	MOSFET (Metal Oxide)	28 nC	PG-TO220-3	3.5 V