S1ML Series

Manufacturer: Taiwan Semiconductor Corporation

Catalog

DIODE GEN PURP 1KV 1A SOD123W

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Supplier Device Package	Grade	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Qualification
Taiwan Semiconductor Corporation S1MLW	SOD-123W	1000 V	1 µA	Standard Recovery >500ns	200 mA	Standard	1.1 V	Surface Mount	175 ░C	-55 C	1 A	SOD-123W
Taiwan Semiconductor Corporation S1MLHRQG	DO-219AB	1000 V	5 µA	Standard Recovery >500ns	200 mA	Standard	1.1 V	Surface Mount	175 ░C	-55 C	1 A	Sub SMA	Automotive	9 pF	1.8 µs	AEC-Q101
Taiwan Semiconductor Corporation S1MLHRFG	DO-219AB	1000 V	5 µA	Standard Recovery >500ns	200 mA	Standard	1.1 V	Surface Mount	175 ░C	-55 C	1 A	Sub SMA	Automotive	9 pF	1.8 µs	AEC-Q101
Taiwan Semiconductor Corporation S1ML RQG	DO-219AB	1000 V	5 µA	Standard Recovery >500ns	200 mA	Standard	1.1 V	Surface Mount	175 ░C	-55 C	1 A	Sub SMA		9 pF	1.8 µs
Taiwan Semiconductor Corporation S1MLH	DO-219AB	1000 V	5 µA	Standard Recovery >500ns	200 mA	Standard	1.1 V	Surface Mount	175 ░C	-55 C	1 A	Sub SMA		9 pF	1.8 µs
Taiwan Semiconductor Corporation S1MLS RVG	SOD-123H	1000 V	5 µA		200 mA 500 ns	Standard		Surface Mount	150 °C	-55 °C	1.2 A	SOD-123HE
Taiwan Semiconductor Corporation S1MLHMQG	DO-219AB	1000 V	5 µA	Standard Recovery >500ns	200 mA	Standard	1.1 V	Surface Mount	175 ░C	-55 C	1 A	Sub SMA	Automotive	9 pF	1.8 µs	AEC-Q101
Taiwan Semiconductor Corporation S1MLSHRVG	SOD-123H	1000 V	5 µA		200 mA 500 ns	Standard		Surface Mount	150 °C	-55 °C	1.2 A	SOD-123HE
Taiwan Semiconductor Corporation S1ML	DO-219AB	1000 V	5 µA	Standard Recovery >500ns	200 mA	Standard	1.1 V	Surface Mount	175 ░C	-55 C	1 A	Sub SMA		9 pF	1.8 µs
Taiwan Semiconductor Corporation S1ML RVG	DO-219AB	1000 V	5 µA	Standard Recovery >500ns	200 mA	Standard	1.1 V	Surface Mount	175 ░C	-55 C	1 A	Sub SMA		9 pF	1.8 µs