Catalog
650V, 6A, THD, Silicon-carbide (SiC) SBD
Description
AI
Shorter recovery time, enabling high-speed switching.
Beta
⌘K
650V, 6A, THD, Silicon-carbide (SiC) SBD
650V, 6A, THD, Silicon-carbide (SiC) SBD
| Part | Voltage - Forward (Vf) (Max) | Mounting Type | Package Name | Capacitance | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Current - Reverse Leakage | Operating Temperature - Junction | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Package / Case | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 1.5 V | Through Hole | TO-220FM | 300 pF | SiC (Silicon Carbide) Schottky | 650 V | 6 A | 30 µA | 175 °C | 500 mA | No Recovery Time | 500 mA 500 mA | TO-220-2 Full Pack | 0 ns |