STH140N8F7-2 Series

N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package

Catalog

N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package

Part	Power Dissipation (Max)	Package Name	Vgs(th) (Max)	Package / Case	Rds On (Max)	Gate Charge (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Mounting Type
STMicroelectronics STH140N8F7-2	200 W	H2Pak-2	4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 mOhm	96 nC	MOSFET (Metal Oxide)	10 V	20 V	-55 °C	175 °C	80 V	6340 pF	N-Channel	90 A	Surface Mount

Catalog

N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.