UMOS9-H Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFETS 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
| Part | Gate Charge (Max) | Package Name | Package Length | Package Width | Operating Temperature | Input Capacitance (Ciss) (Max) | Package / Case | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Technology | Mounting Type | Power Dissipation (Max) | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | FET Type | Vgs (Max) | Rds On (Max) | Current - Continuous Drain (Id) (Tc) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 71 nC | 8-SOP Advance | 5 mm | 5.75 mm | 175 °C | 7200 pF | 8-PowerTDFN | 6 V | 10 V | MOSFET (Metal Oxide) | Surface Mount | 3 W 180 W | 3.5 V | 80 V | N-Channel | 20 V | 3 mOhm 3 mOhm | 100 A |