DMN2310UTQ Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Qualification	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]
Diodes Inc DMN2310UTQ-7	1.8 V 4.5 V	Surface Mount	SOT-523	AEC-Q101	290 mW	0.7 nC	20 V	38 pF	SOT-523	8 V	950 mV	240 mOhm	N-Channel	MOSFET (Metal Oxide)	1.2 A	Automotive	-55 °C	150 °C
Diodes Inc DMN2310UWQ-7	1.8 V 4.5 V	Surface Mount	SOT-323	AEC-Q101	450 mW	0.7 nC	20 V	38 pF	SC-70 SOT-323	8 V	950 mV		N-Channel	MOSFET (Metal Oxide)	1.3 A	Automotive	-55 °C	150 °C	200 mOhm
Diodes Inc DMN2310UWQ-13	1.8 V 4.5 V	Surface Mount	SOT-323	AEC-Q101	450 mW	0.7 nC	20 V	38 pF	SC-70 SOT-323	8 V	950 mV		N-Channel	MOSFET (Metal Oxide)	1.3 A	Automotive	-55 °C	150 °C	200 mOhm
Diodes Inc DMN2310UW-7	1.8 V 4.5 V	Surface Mount	SOT-323		450 mW	0.7 nC	20 V	38 pF	SC-70 SOT-323	8 V	950 mV		N-Channel	MOSFET (Metal Oxide)	1.3 A		-55 °C	150 °C	200 mOhm
Diodes Inc DMN2310UFD-7	1.5 V 4.5 V	Surface Mount	U-DFN1212-3 (Type C)			0.7 nC	20 V	38 pF	3-PowerUDFN	8 V	950 mV		N-Channel	MOSFET (Metal Oxide)	1.7 A		-55 °C	150 °C		670 mW

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS compliant

• Halogen- and Antimony-Free. "Green" Device

• For automotive applications requiring specific changecontrol (i.e. parts qualified to AEC-Q100/101/200, PPAPcapable, and manufactured in IATF 16949 certified facilities),pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.